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? freescale semiconductor, inc., 2006?2010. all rights reserved. freescale semiconductor data sheet: advance information this document contains information on a new product. specificatio ns and information herein are su bject to change without notice . document number: MC13852 rev. 2.0, 12/2010 MC13852 package information plastic package: mlpd-8 2.0 x 2.0 x 0.6 mm case: 2128-01 ordering information device device marking package MC13852ep 852 mlpd-8 1 introduction the MC13852 is a cost-effective high gain lna with low noise figure. this is th e lower application frequency version of the mc13851. an integrated bypass switch is included to preserve high input intercept performance in variable signal strength environments and boosts dy namic range. on-chip bias circuitry offers low system cost. the input and output match are external to allow maximum design flexibility. the external resistor used to set device current enables balancing required linear ity with low current consumption. gain is optim ized for applications <1000 mhz. the MC13852 is fabricated with an advanced rf bicmos process using the esige:c module and is available in the 2 2 mm mlpd-8 leadless package, offering a small, low height , easy-to-solder solution for applications with tight prin ted circuit board placement requirements. MC13852 general purpose low noise amplifier with bypass switch contents: 1 introduction . . . . . . . . . . . . . . . . . . . . . . . . . . . . .1 2 electrical specifications . . . . . . . . . . . . . . . . . . .3 3 applications information . . . . . . . . . . . . . . . . . . .8 4 printed circuit board and bills of materials . .14 5 scattering and noise parameters . . . . . . . . . . .18 6 packaging . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .27 7 product documentation . . . . . . . . . . . . . . . . . . .28 8 revision history . . . . . . . . . . . . . . . . . . . . . . . . .28
introduction MC13852 advance information, rev. 2.0 2 freescale semiconductor 1.1 features ? the MC13852 is intended for applications from 400 to 1000 mhz; the mc13851 is for applications >1000 mhz. ? gain: 20.3 db (typ) at 434 mhz, 18.7 db (typ) at 900 mhz. ? output third order intercept point (oip3): 10.6 dbm at 434 mh z, 14.2 dbm (typ) dbm at 900 mhz. ? noise figure (nf): 1.65 db (typ) at 434 mhz, 1.2 db at 900 mhz. ? output 1 db compression point (p1db): 7.8 db m (typ) at 434 mhz, 9.6 dbm (typ) at 900 mhz. ? ip3 boost circuitry. ? bypass mode return losses are comparable to act ive mode, for use in systems with filters and duplexers. ? bypass mode improves dynamic range in variable signal strength environments. ? integrated logic-controlled standb y mode with current drain < 1ua. ? total supply current variable from 3?6 ma using an external bias resistor. ? average current drain <0.6ma in a receiver lineup with 20% active / 80% bypass mode operation. ? on-chip bias sets the bias point. ? bias stabilized for device and temperature variations. ? mlpd-8 leadless package with low parasitics. ? 434 mhz and 900 mhz application circuit evalua tion boards with characterization data are available. ? available in tape and reel packaging. 1.2 applications ideal for use in any rf product that operates be tween 400 mhz and 1 ghz, and may be applied in: ? buffer amplifiers ?mixers ? if amplifiers ? voltage-controlled oscillators (vcos) ? use with transceivers requiring external lnas ? rf smart metering ? mobile: cellular front-end lna, 2-way radios ? auto: rke, key fob, tpms ? low current drain/long standby time for extended battery life applications figure 1 shows a simplified block diagram, with the pi nouts and the location of the pin 1 marking on the package.
electrical specifications MC13852 advance information, rev. 2.0 freescale semiconductor 3 figure 1. simplified block diagram 2 electrical specifications table 1 lists the maximum ratings for the device. table 2 lists the recommended operating conditions. table 1. maximum ratings ratings symbol value unit supply voltage v cc 3.3 v storage temperature range t stg -65 to 150 c operating ambient temperature range t a -30 to 85 c rf input power p rf 10 dbm power dissipation p dis 100 mw thermal resistance, junction to case r jc 24 c/w thermal resistance, junction to ambient, 4 layer board r ja 90 c/w notes: 1. maximum ratings are those values beyond which damage to the device may occur. functional operation should be restricted to the limits in the recommended operating conditions and electrical characteristics tables. 2. esd (electrostatic discharge) immunity meets human body model (hbm) 200 v, charge device model (cdm) 450 v, and machine model (mm) 50 v. additional esd data available upon request. table 2. recommended operating conditions characteristic symbol min typ max unit rf frequency range f rf 400 ? 1000 mhz supply voltage v cc 2.32.753.0vdc logic voltage input high voltage input low voltage ?1.25 0 1.8 ? v cc 0.8 vdc rf out 2 5 7 6 gain logic vcc rf in 3 1 band 8 4 enable rbias emit
electrical specifications MC13852 advance information, rev. 2.0 4 freescale semiconductor table 3 shows the use of the gain, enable and band pins (along with the vcc and rf out pins), to select active mode (high gain), bypass mode (low gain), or standby m ode (disable) operation. table 4 lists electrical characteri stics associated with noise pe rformance measured in a 50 system. additional noise parameters are listed in table 14 and table 15 . also listed are the typical icc and rf turn-on times for the device. table 5 lists the electrical characteristics measured on evaluation boards that are tuned for typical application frequencies. fu rther details on the application circuits are shown in section 4 ; details on the boards are shown in section 5 . table 3. truth table pin function pin name enable disable low gain high gain low gain high gain logic circuit bias vcc vcc 1 1 1 1 toggles gain mode (active or bypass) gain 0 1 0 1 toggles lna on/off enable 1 1 0 0 selects the lna band 1 1 1 1 notes: 1. logic state "1" equals vcc voltage. logic state of "0" equals ground potential. 2. vcc is inductively coupled to lna out pin and vcc pin. 3. minimum logic state "1" for enable and gain pins is 1.25v. 4. maximum logic state "0" for enable and gain pins is 0.8v. table 4. electrical characteristics (vcc = 2.75 v, ta = 25 c) characteristic symbol min typ max unit insertion gain r1=1.2 k , freq=434 mhz r1=1.2 k , freq=900 mhz |s21| 2 20.4 16.4 21.9 18.3 ?db maximum stable gain and/or maximum available gain [note1] r1=1.2 k , freq=434 mhz r1=1.2 k , freq=900 mhz msg, mag 26.7 22 28.2 23.5 ?db minimum noise figure r1=1.2 k , freq=434 mhz r1=1.2 k , freq=900 mhz nfmin ? 0.92 0.84 1.2 1.1 db associated gain at minimum noise figure r1=1.2 k , freq=434 mhz r1=1.2 k , freq=900 mhz gnf 27.6 21 29.6 23 ?db icc and rf turn on time enable trigger total time of 1.8 usec from 0 to 2.75 v icc rise time from 0 to 76% of final current level icc rise time from 0 to 87% of final current level rf on time from leading edge of enable trigger to rf turn-on ??6.4 9.6 1.37 ? usec notes: 1. maximum available gain and maximum stable gain are defined by the k factor as follows: mag=|s21/s12(k+/-sqrt(k2-1))|, if k>1, msg =|s21/s12|, if k<1
electrical specifications MC13852 advance information, rev. 2.0 freescale semiconductor 5 table 5. electrical characteristics measured in frequency specific tuned circuits (v cc = 2.775 v, t a = 25c, rbias = 2 k , unless otherwise noted.) characteristic symbol min typ max unit 434 mhz frequency f ? 434 ? mhz active rf gain g 19.3 20.3 ? db active noise figure nf ? 1.65 1.95 db active input third order intercept point iip3 -10.7 -9.7 ? dbm active output 1 db compression point p 1db 6.8 7.8 ? dbm active current @ 2.75 v, rbias=1.2 k i cc ?5.56.5ma active current @ 2.75 v, rbias=1.5 k i cc ?4.45.4ma active gain s21 19 20.1 ? db bypass rf gain g -9.5 -8.5 ? db bypass noise figure nf ? 8.9 9.9 db bypass input third order intercept point iip3 24 25.1 ? dbm bypass current ? ? 4 20 a bypass gain s21 -9.5 -8.5 ? db 900 mhz frequency f ? 900 ? mhz active rf gain g 17.6 18.6 ? db active noise figure nf ? 1.2 1.55 db active input third order intercept point iip3 -5.7 -4.4 ? dbm active output 1 db compression point p 1db 8.5 9.6 ? dbm active current @ 2.75 v, rbias=1.2 k i cc ?5.56.5ma active current @ 2.75 v, rbias=1.5 k i cc ?4.45.4ma active gain s21 17.5 18.5 ? db bypass rf gain g -6.7 -5.7 ? db bypass noise figure nf ? 6.1 7.1 db bypass input third order intercept point iip3 25 26.7 ? dbm bypass current ? ? 4 10 a bypass gain s21 -6.7 -5.7 ? db
electrical specifications MC13852 advance information, rev. 2.0 6 freescale semiconductor figure 2 and figure 3 show maximum stable and maximum avai lable gain and forward insertion gain versus frequency for the packaged device in a 50 system using bias resistors of 1.5 k and 1.2 k . figure 2. maximum stable/available gain and forward insertion gain vs. frequency, rbias = 1.5 k figure 3. maximum stable/available gain and forward insertion gain vs. frequency, rbias = 1.2 k 12 14 16 18 20 22 24 26 28 30 32 300 400 500 600 700 800 900 1000 1100 1200 frequency ? (ghz) msg/mag ? (db) |s21|^2 ? (db) |s21| 2 msg msg, mag, [s21] 2 (db) [s21] 2 12 14 16 18 20 22 24 26 28 30 32 300 400 500 600 700 800 900 1000 1100 1200 msg/mag ? (db) |s21|^2 ? (db) |s21| 2 msg [s21] 2 msg, mag, [s21] 2 (db)
electrical specifications MC13852 advance information, rev. 2.0 freescale semiconductor 7 figure 4 and figure 5 show minimum noise figure and associated gain versus frequency for the packaged device in a 50 system using bias resistors of 1.5 k and 1.2 k . figure 4. minimum noise figure and associated gain vs. frequency, rbias = 1.5 k figure 5. minimum noise figure and associated gain vs. frequency, rbias = 1.2 k 0 5 10 15 20 25 30 35 40 0.6 0.7 0.8 0.9 1 1.1 0.30.50.70.91.1 frequency ? (ghz) nfmin gnf gnf nfmin minimum noise figure (db) associated gain \ 10 \ 5 0 5 10 15 20 25 30 35 40 0.6 0.7 0.8 0.9 1 1.1 0.3 0.5 0.7 0.9 1.1 frequency ? (ghz) nfmin gnf gnf nfmin minimum noise figure (db) associated gain
applications information MC13852 advance information, rev. 2.0 8 freescale semiconductor figure 6 shows the icc current drain for a range of values for the external bias resistor rbias. figure 6. icc vs. bias resistor r1 value 3 applications information the MC13852 lna is designed for applications in th e 400 mhz to 1 ghz range. it has three different modes: high gain, low gain (bypass) and standby. the lna is programmable through the gain and enable pins. the logic truth table is given in table 3 . the internal bypass switch is designed for broadband applications. one of the advantages of the MC13852 is the simplifica tion of the matching network in both bypass and amplifier modes. the bypass switch is designed so th at changes of input and out put return losses between bypass mode and active mode are minimized and th e matching network design is simplified. in these application examples, a balance is made between the competing rf performance characteristics of icc, nf, gain, ip3, and return losses with unconditiona l stability. conjugate matc hing is not used for the input or output. instead, matching which achieves a tr ade-off in rf performance qualities is used. for a particular application or specifica tion requirement, the matching can be changed to achieve enhanced performance of one parameter. measurements are made at a bias of vcc = 2.75 v. frequency spacing for ip3 measurements is 200 khz. non-linear measurements are made at pin = -30 dbm . typical application circuits are provided for 434 mhz and 900 mhz applications. typical rf performanc e is shown for two values of bias resistor r1: 1.2 k and 1.5 k . these two current drain levels offer variations in intercept point, gain and noise figure. included with each applic ation are the schematics a nd electrical performance. ? section 4 provides the evaluation board layout and bill of material for the circuits. ? section 5 provides smith charts with gain and noise circles for each application frequency. y ? = ? 1.7619x 2 \ 8.5883x ? + ? 13.293 r2 ? = ? 0.9983 2 2.5 3 3.5 4 4.5 5 5.5 6 6.5 1.1 1.3 1.5 1.7 1.9 2.1 rbias ? value ? (kohm) icc ? ma poly. ? (icc ? ma) icc (ma)
applications information MC13852 advance information, rev. 2.0 freescale semiconductor 9 3.1 434 mhz application this application was designed to provide typical nf = 1.65 db, s21 gain = 20 db, oip3 =10.6 dbm at 434 mhz. typical performance that can be expect ed from this circuit at 2.75 v is listed in table 6 . the component values can be changed to enhance the performa nce of a particular parame ter, but usually at the expense of another. two values of bi as resistor r1 are shown to demons trate performance for different ip3 and icc requirements. ? values of external resistor r1 are varied to adjust icc and ip3. ? inductor l3 provides bias to the logic circuit. figure 7 is the 434 mhz application schem atic with package pinouts and the circuit com ponent topology. figure 7. 434 mhz application schematic table 6. typical 434 mhz evaluation board performance (vcc = 2.75v, ta = 25 c) characteristic symbol min typ max unit r1 = 1.2 k frequency f ? 434 ? mhz rf gain high gain bypass g 19.3 -9.5 20.3 -8.5 ? ? db output third order intercept point high gain bypass oip3 9.5 15.5 10.6 16.6 ? ? dbm input third order intercept point high gain bypass iip3 -10.7 24 -9.7 25.1 ? ? dbm out ref p1db high gain p1dbout 6.8 7.8 ? dbm in ref p1db high gain p1dbin -13.5 -12.5 ? dbm rf out r2 30 ohm l1 27 nh c2 47 pf l2 47 nh c5 33 pf c4 0.1 uf gain vcc . enable rbias r1 1.2 kohm c3 22 pf gain enable 6 1 3 2 lo g ic 7 5 4 8 emit c1 1.3 pf r3 82 ohm l3 270 nh
applications information MC13852 advance information, rev. 2.0 10 freescale semiconductor noise figure high gain bypass nf ? ? 1.65 8.9 1.95 9.9 db current draw high gain bypass i cc ? ? 5.5 4 6.5 20 ma a rbias r1 value ? ? 1.2 ? k input return loss high gain bypass s11 ? ? -6.7 -17 -5.5 -15 db gain high gain bypass s21 19 -9.5 20.1 -8.5 ? ? db reverse isolation high gain bypass s12 ? ? -35.5 -8.6 -33.5 -6.5 db output return loss high gain bypass s22 ? ? -14.5 -20.4 -12 -17 db r1 = 1.5 k frequency f ? 434 ? mhz rf gain high gain bypass g 18.5 -9.4 19.5 -8.4 ? ? db output third order intercept point high gain bypass oip3 6.8 15.4 7.9 16.5 ? ? dbm input third order intercept point high gain bypass iip3 -12.6 23 -11.6 24.9 ? ? dbm out ref p1db high gain p1dbout 5.2 6.2 ? dbm in ref p1db high gain p1dbin -14.3 -13.3 ? dbm noise figure high gain bypass nf ? ? 1.6 8.7 1.9 9.7 db current draw high gain bypass i cc ? ? 4.4 4 5.4 20 ma a rbias r1 value ? ? 1.5 ? k table 6. typical 434 mhz evaluation board performance (vcc = 2.75v, ta = 25 c) (continued) characteristic symbol min typ max unit
applications information MC13852 advance information, rev. 2.0 freescale semiconductor 11 3.2 900 mhz application this application circuit is designed to demons trate performance at 900 mh z. typical results of nf = 1.2 db, s21 gain = 18.5 db, and oip3 of 14.2 dbm. by varying the value of resistor r 1, the current draw and ip3 performan ce of the device can be tailored for a particular application. two values of bias resistor r1 are shown to de monstrate performance for different ip3 and icc requirements. ? resistor r3 is used to de-q output inductor l2 and adjust gain and return losses. reducing r3 lowers gain and improves return losses. ? inductor l1 can be raised in value at lower current operation to improve return losses. typical performance that can be expected from this circuit at 2.75 v is listed in table 7 . figure 8 is the 900 mhz application schem atic with package pinouts and the circuit com ponent topology. figure 8. 900 mhz application schematic input return loss high gain bypass s11 ? ? -5.5 -17.2 -4.5 -15.5 db gain high gain bypass s21 18.3 -9.3 19.3 -8.3 ? ? db reverse isolation high gain bypass s12 ? ? -35 -8.3 -32 -7.3 db output return loss high gain bypass s22 ? ? -13.9 -20.4 -11 -19 db table 6. typical 434 mhz evaluation board performance (vcc = 2.75v, ta = 25 c) (continued) characteristic symbol min typ max unit rf out r2 20 ohm l1 12 nh c1 3.9 pf l2 10 nh c4 33 pf c3 .0 1u pf gain vcc rf in . enable rbias r1 1.2 kohm c2 2.4 pf gain enable 6 1 3 2 logic 7 5 4 8 r3 200 ohm l3 270 nh
applications information MC13852 advance information, rev. 2.0 12 freescale semiconductor table 7. typical 900 mhz evaluation board performance (vcc = 2.75v, ta = 25 c) characteristic symbol min typ max unit r1 = 1.2 k frequency f ? 900 ? mhz rf gain high gain bypass g 17.6 -6.7 18.6 -5.7 ? ? db output third order intercept point high gain bypass oip3 13 19.5 14.2 21 ? ? dbm input third order intercept point high gain bypass iip3 -5.4 25 -4.4 26.7 ? ? dbm out ref p1db high gain p1dbout 8.5 9.6 ? dbm in ref p1db high gain p1dbin -9.9 -8.9 ? dbm noise figure high gain bypass nf ? ? 1.2 6.1 1.55 7.1 db current draw high gain bypass i cc ? ? 5.5 4 6.5 20 ma a rbias r1 value ? ? 1.2 ? k input return loss high gain bypass s11 ? ? -8.8 -11 -7 -9 db gain high gain bypass s21 17.5 -6.7 18.5 -5.7 ? ? db reverse isolation high gain bypass s12 ? ? -28 -5.7 -26.5 -4.7 db output return loss high gain bypass s22 ? ? -13 -25 -10 -20 db r1 = 1.5 k frequency f ? 900 ? mhz rf gain high gain bypass g 17.2 -7.7 18.2 -5.7 ? ? db output third order intercept point high gain bypass oip3 12.1 19.8 13.1 21 ? ? dbm
applications information MC13852 advance information, rev. 2.0 freescale semiconductor 13 input third order intercept point high gain bypass iip3 -6.2 25.5 -5.1 26.7 ? ? dbm out ref p1db high gain p1dbout 8.5 9.9 ? dbm in ref p1db high gain p1dbin -10 -8.4 ? dbm noise figure high gain bypass nf ? ? 1.18 6.1 1.5 7.1 db current draw high gain bypass i cc ? ? 4.4 4 5.4 20 ma a rbias r1 value ? ? 1.5 ? k input return loss high gain bypass s11 ? ? -7.6 -11 -6.2 -9 db gain high gain bypass s21 17.2 -6.7 18.2 -5.7 ? ? db reverse isolation high gain bypass s12 ? ? -27.7 -5.7 -26.7 -4.7 db output return loss high gain bypass s22 ? ? -12.5 -25 -10 -20 db table 7. typical 900 mhz evaluation board performance (vcc = 2.75v, ta = 25 c) (continued) characteristic symbol min typ max unit
printed circuit board and bills of materials MC13852 advance information, rev. 2.0 14 freescale semiconductor 4 printed circuit board and bills of materials figure 9 is the drawing of th e printed circuit board. figure 11 and figure 12 are drawings of the evaluation boards used for each of the application frequenc y designs described in section 3 . these drawings show the boards with the circuit matching components placed and identified. the bill of materials for the applicati on frequency circuit boards is listed in table 8 and table 9 . the value, case size, manufacturer and circu it function of each component is shown. figure 9. printed circuit board note: dimensions are in inches and [mm]. soldering note: the center flag under the part must be soldered down to ground on the board.
printed circuit board and bills of materials MC13852 advance information, rev. 2.0 freescale semiconductor 15 figure 10 is a picture of a typical assem bled evaluation board similar to the ones in the evaluation kits. figure 10. typical assembled evaluation board with sma connectors figure 11. 434 mhz application board table 8. bill of materials for 434 mhz application board component value case ma nufacturer comments c1 1.3 pf 402 murata dc block, input match c2 47 pf 402 murata dc block, input match c3 22 pf 402 murata output match c4 0.1 uf 402 murata low frequency bypass c5 33 pf 402 murata rf bypass
printed circuit board and bills of materials MC13852 advance information, rev. 2.0 16 freescale semiconductor figure 12. 900 mhz application board l1 27 nh 402 murata input match l2 47 nh 402 murata output match, bias decouple l3 270 nh 402 murata bias couple to logic r1 1.2 k 402 koa bias set point r2 30 402 koa stability, lower gain r3 82 402 koa l2 de-q, gain adjust q1 MC13852 mlp 2x2 freescale sige lna table 9. bill of materials for 900 mhz application board component value case ma nufacturer comments c1 3.9 pf 402 murata input match c2 2.4 pf 402 murata output match c3 0.1 uf 402 murata low frequency bypass c4 33 pf 402 murata rf bypass l1 12 nh 402 murata input match l2 10 nh 402 murata output match table 8. bill of materials for 434 mhz application board (continued) component value case ma nufacturer comments
printed circuit board and bills of materials MC13852 advance information, rev. 2.0 freescale semiconductor 17 l3 270 nh 402 murata bias couple to logic r1 1.2 k 402 koa lna bias r2 20 402 koa stability, lower gain r3 200 402 koa de-q l2, adjust gain, rls q1 MC13852 mlp 2x2 freescale sige lna table 9. bill of materials for 900 mhz application board (continued) component value case ma nufacturer comments
scattering and noise parameters MC13852 advance information, rev. 2.0 18 freescale semiconductor 5 scattering and noise parameters table 10 through table 13 list the s parameters for the packaged part in a 50 system for each of the modes of operation and for two values of the external bias resistor. table 10. scattering parameters, active mode, rbias = 1.2 k (vcc = 2.75v, 25 c, 50 system) f (mhz) s11 s21 s12 s22 mag ang mag ang mag ang mag ang 300 0.842 -6.5 14.329 149.3 0.013 88.9 0.952 -2.0 350 0.821 -7.5 13.624 146.1 0.015 89.9 0.939 -2.0 400 0.801 -8.1 12.975 143.0 0.017 90.0 0.927 -1.9 450 0.779 -8.6 12.343 140.3 0.019 90.2 0.915 -1.8 500 0.739 -11.2 11.895 136.6 0.021 89.5 0.909 1.5 550 0.728 -11.9 11.296 134.4 0.024 90.1 0.891 2.4 600 0.710 -12.2 10.764 132.4 0.025 90.3 0.882 3.1 650 0.691 -12.3 10.269 130.4 0.028 91.1 0.874 3.6 700 0.677 -12.1 9.820 129.0 0.030 91.4 0.863 4.3 750 0.662 -12.0 9.403 127.4 0.031 92.4 0.856 4.9 800 0.649 -12.1 8.955 126.3 0.033 92.9 0.849 5.8 850 0.636 -12.6 8.605 125.0 0.036 93.2 0.842 6.5 900 0.623 -11.8 8.263 123.9 0.037 93.7 0.832 7.0 950 0.610 -11.5 7.937 122.9 0.039 94.2 0.827 7.5 1000 0.599 -11.4 7.637 121.9 0.041 94.9 0.820 8.2 1050 0.588 -10.8 7.359 121.1 0.044 95.4 0.813 8.5 1100 0.576 -10.9 7.100 120.3 0.046 95.8 0.808 9.3 1150 0.565 -10.2 6.857 119.7 0.048 96.2 0.800 9.5 1200 0.554 -10.0 6.642 118.7 0.050 96.5 0.794 9.8 table 11. scattering parameters, active mode, rbias = 1.5 k (vcc = 2.75v, 25 c, 50 system) f (mhz) s11 s21 s12 s22 mag ang mag ang mag ang mag ang 300 0.877 -5.4 11.365 155.1 0.013 89.7 0.972 -1.0 350 0.860 -6.3 10.935 152.4 0.015 90.0 0.963 -1.0 400 0.843 -7.0 10.523 149.8 0.017 90.5 0.953 -0.9
scattering and noise parameters MC13852 advance information, rev. 2.0 freescale semiconductor 19 450 0.825 -7.6 10.136 147.5 0.020 90.8 0.944 -0.9 500 0.788 -10.4 9.908 144.0 0.022 89.8 0.943 2.2 550 0.777 -11.2 9.493 141.9 0.024 90.0 0.926 3.0 600 0.761 -11.8 9.128 139.9 0.026 90.5 0.918 3.6 650 0.743 -12.1 8.795 138.1 0.028 90.8 0.911 4.0 700 0.730 -12.1 8.513 136.7 0.030 91.2 0.901 4.4 750 0.713 -12.3 8.228 135.1 0.032 91.8 0.894 4.9 800 0.699 -12.6 7.875 134.0 0.034 92.1 0.887 5.8 850 0.686 -13.3 7.624 132.7 0.036 92.2 0.879 6.4 900 0.670 -12.7 7.375 131.5 0.038 92.9 0.870 6.8 950 0.655 -12.6 7.125 130.3 0.040 93.6 0.864 7.4 1000 0.642 -12.5 6.885 129.2 0.042 93.7 0.856 8.0 1050 0.630 -12.1 6.667 128.3 0.044 94.3 0.849 8.3 1100 0.616 -12.2 6.457 127.4 0.046 95.0 0.845 9.1 1150 0.603 -11.7 6.264 126.7 0.048 95.6 0.838 9.4 1200 0.592 -11.5 6.084 125.6 0.050 95.8 0.831 9.7 table 12. scattering parameters, bypass mode, rbias = 1.2 k and 1.5 k f (mhz) s11 s21 s12 s22 mag ang mag ang mag ang mag ang 300 0.593 -32.3 0.573 36.7 0.573 36.7 0.615 -27.7 350 0.540 -32.9 0.601 32.8 0.601 32.8 0.561 -27.6 400 0.496 -32.8 0.621 29.8 0.621 29.7 0.517 -26.8 450 0.459 -32.2 0.636 27.2 0.636 27.2 0.480 -25.6 500 0.413 -33.1 0.648 24.3 0.648 24.3 0.451 -20.2 550 0.391 -32.5 0.656 22.6 0.656 22.6 0.424 -17.7 600 0.368 -31.5 0.663 21.2 0.663 21.2 0.403 -15.3 650 0.348 -30.2 0.668 20.0 0.668 20.0 0.387 -13.1 700 0.333 -28.9 0.672 19.0 0.672 19.0 0.373 -10.8 750 0.318 -27.7 0.675 18.2 0.675 18.2 0.363 -8.4 table 11. scattering parameters, active mode, rbias = 1.5 k (continued) (vcc = 2.75v, 25 c, 50 system) f (mhz) s11 s21 s12 s22 mag ang mag ang mag ang mag ang
scattering and noise parameters MC13852 advance information, rev. 2.0 20 freescale semiconductor 800 0.305 -26.7 0.678 17.4 0.678 17.4 0.353 -5.9 850 0.292 -25.8 0.68 16.8 0.679 16.7 0.345 -3.4 900 0.282 -24.4 0.682 16.2 0.682 16.2 0.337 -1.3 950 0.272 -23.2 0.683 15.8 0.683 15.7 0.332 0.6 1000 0.263 -22.3 0.685 15.3 0.684 15.3 0.327 2.8 1050 0.256 -21.1 0.685 15.0 0.685 15.0 0.323 4.5 1100 0.247 -20.3 0.686 14.6 0.686 14.6 0.320 6.5 1150 0.239 -19.2 0.687 14.3 0.687 14.3 0.316 8.1 1200 0.231 -18.4 0.688 14.1 0.688 14.1 0.314 9.5 table 13. scattering parameters, standby mode, rbias = 1.2 k and 1.5 k (vcc = 2.75v, 25 c, 50 system) f (mhz) s11 s21 s12 s22 mag ang mag ang mag ang mag ang 300 0.974 -0.3 0.013 95.0 0.014 94.8 0.996 3.5 350 0.973 -0.2 0.016 95.5 0.016 95.1 0.994 4.1 400 0.972 -0.2 0.018 96.2 0.018 95.5 0.993 4.7 450 0.971 -0.1 0.020 96.7 0.021 96.5 0.992 5.2 500 0.956 -2.7 0.023 95.1 0.023 95.1 1.007 8.5 550 0.960 -3.2 0.026 95.8 0.026 96.0 0.999 9.6 600 0.958 -3.6 0.028 96.2 0.028 95.9 1.000 10.4 650 0.953 -3.7 0.031 96.7 0.031 96.6 1.001 11.0 700 0.952 -3.9 0.033 97.1 0.033 97.0 0.997 11.7 750 0.949 -4.1 0.036 97.5 0.036 97.5 0.998 12.4 800 0.946 -4.6 0.039 97.7 0.039 97.7 0.998 13.2 850 0.940 -5.2 0.041 98.1 0.041 97.9 0.998 14.0 900 0.941 -5.1 0.044 98.3 0.044 98.2 0.994 14.5 950 0.937 -5.3 0.047 98.8 0.047 98.8 0.994 15.0 1000 0.934 -5.7 0.049 98.9 0.049 98.8 0.993 15.6 table 12. scattering parameters, bypass mode, rbias = 1.2 k and 1.5 k (continued) f (mhz) s11 s21 s12 s22 mag ang mag ang mag ang mag ang
scattering and noise parameters MC13852 advance information, rev. 2.0 freescale semiconductor 21 table 14 and table 15 list the noise parameters for the packaged part, as measured in a 50 system for active mode operation for two values of the external bias resistor. 1050 0.931 -5.8 0.052 99.2 0.052 99.1 0.992 15.9 1100 0.925 -6.3 0.055 99.3 0.055 99.3 0.993 16.6 1150 0.923 -6.4 0.058 99.6 0.058 99.6 0.990 16.9 1200 0.919 -6.7 0.061 99.7 0.061 99.6 0.989 17.2 table 14. active mode noise parameters, rbias = 1.2 k (vcc = 2.75v, 25 c, 50 system, icc = 4.8 ma) freq fmin gamma opt rn ga mhz db mag angle db 400 0.94 0.244 4.2 10.0 30.86 450 0.92 0.261 1.5 10.0 29.62 500 0.90 0.273 -0.5 10.0 28.51 700 0.86 0.289 -4.2 10.0 25.18 800 0.85 0.283 -4.6 9.5 23.99 900 0.84 0.274 -4.9 9.5 22.99 1000 0.85 0.265 -5.8 9.5 22.09 1200 0.88 0.262 -12.3 9.5 20.16 table 15. active mode noise parameters, rbias = 1.5 k (vcc = 2.75v, 25 c, 50 system, icc = 3.8 ma) freq fmin gamma opt rn ga mhz db mag angle db 400 0.82 0.313 0.23 10.5 30.82 450 0.83 0.323 0.5 10.5 29.52 500 0.85 0.331 -1.0 10.5 28.37 700 0.90 0.337 -4.3 10.5 24.94 800 0.92 0.331 -5.0 10.5 23.75 900 0.94 0.322 -5.7 10.5 22.76 table 13. scattering parameters, standby mode, rbias = 1.2 k and 1.5 k (continued) (vcc = 2.75v, 25 c, 50 system) f (mhz) s11 s21 s12 s22 mag ang mag ang mag ang mag ang
scattering and noise parameters MC13852 advance information, rev. 2.0 22 freescale semiconductor figure 13 through figure 16 are the constant noise figure and gain ci rcles with input and output stability regions shown on smith charts. gamma opt, noise resist ance and stability at the frequency are shown for two values of the external bi as resistor at 450, 700, 900 and 1000 mhz. 1000 0.95 0.313 -6.8 10.5 21.87 1200 0.96 0.304 -11.7 10.5 19.94 table 15. active mode noise parameters, rbias = 1.5 k (vcc = 2.75v, 25 c, 50 system, icc = 3.8 ma)
scattering and noise parameters MC13852 advance information, rev. 2.0 freescale semiconductor 23 figure 13. constant noise figur e and gain circles, 450 mhz rbias = 1.2 k rbias = 1.5 k
scattering and noise parameters MC13852 advance information, rev. 2.0 24 freescale semiconductor figure 14. constant noise figur e and gain circles, 700 mhz rbias = 1.2 k
scattering and noise parameters MC13852 advance information, rev. 2.0 freescale semiconductor 25 figure 15. constant noise figur e and gain circles, 900 mhz rbias = 1.2 k
scattering and noise parameters MC13852 advance information, rev. 2.0 26 freescale semiconductor figure 16. constant noise figure and gain circles, 1000 mhz rbias = 1.2 k
packaging MC13852 advance information, rev. 2.0 freescale semiconductor 27 6 packaging figure 17 and figure 18 are the package drawings with dimensions for the mlpd-8, 2 2 0.6 mm, package. figure 17. outline dimensions for mlpd-8
product documentation MC13852 advance information, rev. 2.0 28 freescale semiconductor figure 18. packaging details 7 product documentation this data sheet is labele d as a particular type: product preview, advance information, or technical data. definitions of these types are avai lable at: http://www.freescale.com. 8 revision history table 16 summarizes revisions to this document since the last revision. table 16. revision history revision description of changes 2.0 ? updated entire document for chang es due to increased operating frequency range (now 400?1000 mhz, was 800?1000 mhz) and increased operating am bient temperature range (now -40 to 85c, was -30 to 85c), and to the change in packaging from mlf8 to mlpd-8 ( section 6 ). ? electrical characteristics ( section 2 ) were updated. ? new application examples ( section 3 ) for 434 and 900 mhz replace previous examples for 880 and 950 mhz. ? for the new application examples ( section 3 ), printed circuit board layouts were added and bills of materials were updated ( section 4 ). ? scattering and noise parameters (with smith charts for 450, 700, 900, and 1000 mhz) were added in section 5 .
revision history MC13852 advance information, rev. 2.0 freescale semiconductor 29
document number: MC13852 rev. 2.0 12/2010 how to reach us: home page: www.freescale.com web support: http://www.freescale.com/support usa/europe or locations not listed: freescale semiconductor, inc. technical information center, el516 2100 east elliot road tempe, arizona 85284 1-800-521-6274 or +1-480-768-2130 www.freescale.com/support europe, middle east, and africa: freescale halbleiter deutschland gmbh technical information center schatzbogen 7 81829 muenchen, germany +44 1296 380 456 (english) +46 8 52200080 (english) +49 89 92103 559 (german) +33 1 69 35 48 48 (french) www.freescale.com/support japan: freescale semiconductor japan ltd. headquarters arco tower 15f 1-8-1, shimo-meguro, meguro-ku, tokyo 153-0064 japan 0120 191014 or +81 3 5437 9125 support.japan@freescale.com asia/pacific: freescale semiconductor china ltd. exchange building 23f no. 118 jianguo road chaoyang district beijing 100022 china +86 10 5879 8000 support.asia@freescale.com for literature requests only: freescale semiconductor literature distribution center 1-800-441-2447 or +1-303-675-2140 fax: +1-303-675-2150 ldcforfreescalesemiconductor@hibbertgroup.com information in this document is provid ed solely to enable system and software implementers to use freescale semiconduc tor products. there are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits or integrated circuits based on the information in this document. freescale semiconductor reserves the right to make changes without further notice to any products herein. freescale semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does freescale semiconductor assume any liability arising out of the application or use of any product or circuit, and specif ically disclaims any and all liability, including without limitation consequential or incidental damages. ?typical? parameters that may be provided in freescale semiconductor data s heets and/or specifications can and do vary in different applications and actual performance may vary over time. all operating parameters, including ?typicals?, must be validated for each customer application by customer?s technical experts. freescale semiconductor does not convey any license under its patent rights nor the rights of others. freescale semiconductor products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applic ations intended to support or sustain life, or for any other application in which the failure of the freescale semiconductor product could create a situation where personal injury or death may occur. should buyer purchase or use freescale semiconductor products for any such unintended or unauthorized application, buyer shall indemnify and hold freescale semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that freescale semiconductor was negligent regarding the design or manufacture of the part. freescale? and the freescale logo are trademarks of freescale semiconductor, inc. all other product or service names are the property of their respective owners. ? freescale semiconductor, inc. 2006-2010. all rights reserved. rohs-compliant and/or pb-free versions of freescale products have the functionality and electrical characteristics as thei r non-rohs-compliant and/or non-pb-free counterparts. for further information, see http://www.freescale.com or contact your freescale sales representative. for information on freescale?s environmental products program, go to http://www.freescale.com/epp .

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